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DISCRETE SEMICONDUCTORS
DATA SHEET
BF904; BF904R N-channel dual gate MOS-FETs
Product specification Supersedes data of 1997 Sep 05 1999 May 17
Philips Semiconductors
Product specification
N-channel dual gate MOS-FETs
FEATURES * Specially designed for use at 5 V supply voltage * Short channel transistor with high transfer admittance to input capacitance ratio * Low noise gain controlled amplifier up to 1 GHz * Superior cross-modulation performance during AGC. APPLICATIONS * VHF and UHF applications with 3 to 7 V supply voltage such as television tuners and professional communications equipment. DESCRIPTION Enhancement type field-effect transistor in a plastic microminiature SOT143B and SOT143R package. The transistor consists of an amplifier MOS-FET with source
BF904; BF904R
and substrate interconnected and an internal bias circuit to ensure good cross-modulation performance during AGC. CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
PINNING PIN 1 2 3 4 SYMBOL s, b d g2 g1 source drain gate 2 gate 1 DESCRIPTION
handbook, halfpage
d 3
d
handbook, halfpage
4
3
4
g2 g1 1
Top view
g2 g1 2
s,b
Top view
2
MAM124
1
MAM125 - 1
s,b
BF904 marking code: M04.
BF904R marking code: M06.
Fig.1 Simplified outline (SOT143B) and symbol.
Fig.2 Simplified outline (SOT143R) and symbol.
QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj yfs Cig1-s Crs F 1999 May 17 drain current total power dissipation operating junction temperature forward transfer admittance input capacitance at gate 1 reverse transfer capacitance noise figure f = 1 MHz f = 800 MHz 2 PARAMETER drain-source voltage CONDITIONS - - - - 22 - - - MIN. - - - - 25 2.2 25 2 TYP. MAX. 7 30 200 150 30 2.6 35 - UNIT V mA mW C mS pF fF dB
Philips Semiconductors
Product specification
N-channel dual gate MOS-FETs
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VDS ID IG1 IG2 Ptot PARAMETER drain-source voltage drain current gate 1 current gate 2 current total power dissipation BF904 BF904R Tstg Tj Note 1. Device mounted on a printed-circuit board. storage temperature operating junction temperature see Fig.3 Tamb 50 C; note 1 Tamb 40 C; note 1 - - -65 - CONDITIONS - - - - MIN.
BF904; BF904R
MAX. 7 30 10 10 200 200 +150 150 V
UNIT mA mA mA mW mW C C
handbook, halfpage
250
MRA770
P tot (mW) 200
BF904 150 BF904R
100
50
0 0 50 100 150 200 Tamb (o C)
Fig.3 Power derating curves.
1999 May 17
3
Philips Semiconductors
Product specification
N-channel dual gate MOS-FETs
THERMAL CHARACTERISTICS SYMBOL Rth j-a BF904 BF904R Rth j-s thermal resistance from junction to soldering point BF904 BF904R Notes 1. Device mounted on a printed-circuit board. 2. Ts is the temperature at the soldering point of the source lead. STATIC CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL V(BR)G1-SS V(BR)G2-SS V(F)S-G1 V(F)S-G2 VG1-S(th) VG2-S(th) IDSX IG1-SS IG2-SS Note 1. RG1 connects gate 1 to VGG = 5 V; see Fig.20. PARAMETER gate 1-source breakdown voltage gate 2-source breakdown voltage forward source-gate 1 voltage forward source-gate 2 voltage gate 1-source threshold voltage gate 2-source threshold voltage drain-source current gate 1 cut-off current gate 2 cut-off current CONDITIONS VG2-S = VDS = 0; IG1-S = 10 mA VG1-S = VDS = 0; IG2-S = 10 mA VG2-S = VDS = 0; IS-G1 = 10 mA VG1-S = VDS = 0; IS-G2 = 10 mA VG2-S = 4 V; VDS = 5 V; ID = 20 A VG1-S = VDS = 5 V; ID = 20 A VG2-S = 4 V; VDS = 5 V; RG1 = 120 k; note 1 VG2-S = VDS = 0; VG1-S = 5 V VG1-S = VDS = 0; VG2-S = 5 V note 2 Ts = 92 C Ts = 78 C PARAMETER thermal resistance from junction to ambient CONDITIONS note 1
BF904; BF904R
VALUE 500 550 290 360
UNIT K/W K/W K/W K/W
MIN. 6 6 0.5 0.5 0.3 0.3 8 - -
MAX. 15 15 1.5 1.5 1 1.2 13 50 50
UNIT V V V V V V mA nA nA
DYNAMIC CHARACTERISTICS Common source; Tamb = 25 C; VDS = 5 V; VG2-S = 4 V; ID = 10 mA; unless otherwise specified. SYMBOL yfs Cig1-s Cig2-s Cos Crs F PARAMETER forward transfer admittance input capacitance at gate 1 input capacitance at gate 2 drain-source capacitance noise figure f = 1 MHz f = 1 MHz f = 1 MHz f = 200 MHz; GS = 2 mS; BS = BSopt f = 800 MHz; GS = GSopt; BS = BSopt CONDITIONS pulsed; Tj = 25 C MIN. 22 - 1 1 - - - TYP. 25 2.2 1.5 1.3 25 1 2 MAX. 30 2.6 2 1.6 35 1.5 2.8 UNIT mS pF pF pF fF dB dB
reverse transfer capacitance f = 1 MHz
1999 May 17
4
Philips Semiconductors
Product specification
N-channel dual gate MOS-FETs
BF904; BF904R
40 Y fs (mS) 30
MLD268
MRA769
handbook, halfpage gain
0
reduction (dB) 10
20 20
30
10
40
50 0 50 0 50 100 150 o T j ( C) 0 1 2 3 VAGC (V) 4
f = 50 MHz.
Fig.4
Transfer admittance as a function of the junction temperature; typical values.
Fig.5
Typical gain reduction as a function of the AGC voltage.
handbook, halfpage
120
MRA771
MLD270
20 ID (mA) 15 2V V G2 S = 4 V 3V 2.5 V
Vunw (dB V) 110
100
10 1.5 V
90
5 1V
80
0
10
20
30
40 50 gain reduction (dB)
0 0 0.4 0.8 1.2 2.0 1.6 V G1 S (V)
VDS = 5 V; VGG = 5 V; fw = 50 MHz. funw = 60 MHz; Tamb = 25 C; RG1 = 120 k.
Fig.6
Unwanted voltage for 1% cross-modulation as a function of gain reduction; typical values; see Fig.20.
VDS = 5 V. Tj = 25 C.
Fig.7 Transfer characteristics; typical values.
1999 May 17
5
Philips Semiconductors
Product specification
N-channel dual gate MOS-FETs
BF904; BF904R
MLD269
MLD271
handbook, halfpage
20
ID (mA) 16
V G1 S = 1.4 V
handbook, halfpage
150
I G1 1.3 V 1.2 V 1.1 V (A) 100
V G2 S = 4 V 3.5 V
3V
12
2.5 V 50
8
1.0 V 0.9 V 2V
4
0 0 2 4 6 8 10 V DS (V)
0 0 0.5 1.0 1.5 2.0 2.5 V G1 S (V)
VG2-S = 4 V. Tj = 25 C.
VDS = 5 V. Tj = 25 C.
Fig.9 Fig.8 Output characteristics; typical values.
Gate 1 current as a function of gate 1 voltage; typical values.
MLD272
MLD273
handbook, halfpage
40
handbook, halfpage
16
y fs (mS) 30
V G2 S = 4 V 3.5 V 3V
ID (mA) 12
20
2.5 V
8
10
4
2V 0 0 4 8 12 16 20 I D (mA)
0 0 10 20 30 40 50 I G1 (A)
VDS = 5 V. VDS = 5 V. Tj = 25 C. VG2-S = 4 V. Tj = 25 C.
Fig.10 Forward transfer admittance as a function of drain current; typical values.
Fig.11 Drain current as a function of gate 1 current; typical values.
1999 May 17
6
Philips Semiconductors
Product specification
N-channel dual gate MOS-FETs
BF904; BF904R
MLD275
MLD274
handbook, halfpage
12
handbook, halfpage
20
ID (mA)
ID (mA) 15
R G1 = 47 k
68 k 82 k 100 k 120 k 150 k
8
10 180 k 220 k
4
5
0 0 1 2 3 4 VGG (V)
VDS = 5 V; VG2-S = 4 V. RG1 = 120 k (connected to VGG); Tj = 25 C.
0
5
0
2
4
6 V GG = V DS (V)
8
VG2-S = 4 V. RG1 connected to VGG; Tj = 25 C.
Fig.12 Drain current as a function of gate 1 supply voltage (= VGG); typical values; see Fig.20.
Fig.13 Drain current as a function of gate 1 (= VGG) and drain supply voltage; typical values; see Fig.20.
MLD276
handbook, halfpage
12
ID (mA) 8
V GG = 5 V 4.5 V 4V 3.5 V 3V
handbook, halfpage
40
MLB945
I G1 (A) 30
V GG = 5 V 4.5 V 4V
20
3.5 V 3V
4 10
0 0 2 4 V G2 S (V) 6
0 0 2 4 V G2 S (V) 6
VDS = 5 V; Tj = 25 C. RG1 = 120 k (connected to VGG).
VDS = 5 V; Tj = 25 C. RG1 = 120 k (connected to VGG).
Fig.14 Drain current as a function of gate 2 voltage; typical values; see Fig.20.
Fig.15 Gate 1 current as a function of gate 2 voltage; typical values; see Fig.20.
1999 May 17
7
Philips Semiconductors
Product specification
N-channel dual gate MOS-FETs
BF904; BF904R
10 2 handbook, halfpage y is (mS) 10
MLD277
10 3 y rs (S) 10 2 b is
MLD278
10 3
rs (deg) rs
y rs 10 2
1
10
10
g is 10 1 10
102
f (MHz)
10 3
1 10
1 102 f (MHz) 10 3
VDS = 5 V; VG2 = 4 V. ID = 15 mA; Tamb = 25 C.
VDS = 5 V; VG2 = 4 V. ID = 15 mA; Tamb = 25 C.
Fig.16 Input admittance as a function of frequency; typical values.
Fig.17 Reverse transfer admittance and phase as a function of frequency; typical values.
10 2
MLD279
10 2
MLD280
handbook, halfpage
10
y fs (mS)
y fs
fs
(deg)
yos (mS) bos 1
10
fs
10 gos 10 1
1 10
1 102 f (MHz) 10 3
10 2 10
102
f (MHz)
10 3
VDS = 5 V; VG2 = 4 V. ID = 15 mA; Tamb = 25 C.
VDS = 5 V; VG2 = 4 V. ID = 15 mA; Tamb = 25 C.
Fig.18 Forward transfer admittance and phase as a function of frequency; typical values.
Fig.19 Output admittance as a function of frequency; typical values.
1999 May 17
8
Philips Semiconductors
Product specification
N-channel dual gate MOS-FETs
BF904; BF904R
VAGC R1 10 k
C1 4.7 nF C3 12 pF
C2 R GEN 50 VI R2 50 4.7 nF
DUT R G1
L1
450 nH
C4 4.7 nF
RL 50
VGG
V DS
MLD171
Fig.20 Cross-modulation test set-up.
1999 May 17
9
Philips Semiconductors
Product specification
N-channel dual gate MOS-FETs
Table 1 f (MHz) 40 100 200 300 400 500 600 700 800 900 1000 1200 1400 1600 1800 2000 2200 2400 2600 2800 3000 Table 2 Scattering parameters: VDS =5 V; VG2-S = 4 V; ID = 10 mA S11 MAGNITUDE (ratio) 0.989 0.985 0.976 0.958 0.942 0.918 0.899 0.876 0.852 0.823 0.800 0.750 0.719 0.682 0.642 0.602 0.547 0.596 0.682 0.771 0.793 ANGLE (deg) -3.4 -8.3 -16.4 -24.1 -32.0 -39.3 -46.0 -52.6 -58.8 -64.9 -70.9 -82.4 -92.7 -102.5 -109.8 -116.5 -124.9 -128.7 -132.6 -142.5 -157.5 S21 MAGNITUDE (ratio) 2.420 2.414 2.368 2.301 2.251 2.170 2.080 2.001 1.924 1.829 1.747 1.621 1.535 1.424 1.349 1.283 1.130 1.018 0.979 0.804 0.541 ANGLE (deg) 175.7 169.1 158.8 148.5 138.8 129.5 120.7 112.1 103.2 94.7 86.5 70.7 54.6 39.4 22.5 1.1 -15.1 -49.1 -79.4 -116.2 -153.5 S12 MAGNITUDE (ratio) 0.000 0.001 0.003 0.004 0.005 0.005 0.005 0.005 0.005 0.005 0.005 0.005 0.008 0.010 0.013 0.018 0.014 0.040 0.077 0.120 0.149 ANGLE (deg) 79.9 78.3 80.3 73.7 70.7 67.2 67.8 68.6 72.9 78.7 88.3 120.5 139.8 137.8 156.8 175.1 172.6 -163.9 -164.0 178.8 158.3
BF904; BF904R
S22 MAGNITUDE (ratio) 0.993 0.992 0.987 0.980 0.974 0.966 0.958 0.951 0.944 0.937 0.933 0.928 0.930 0.924 0.928 0.928 0.887 0.837 0.778 0.629 0.479 ANGLE (deg) -1.6 -3.9 -7.8 -11.4 -15.2 -18.7 -22.2 -25.5 -28.9 -32.1 -35.2 -41.7 -48.4 -54.9 -62.9 -73.1 -81.0 -95.8 -109.6 -119.5 -119.9
Noise data: VDS = 5 V; VG2-S = 4 V; ID = 10 mA f (MHz) 800 Fmin (dB) 2.00 opt (ratio) 0.686 (deg) 49.6 rn 50.40
1999 May 17
10
Philips Semiconductors
Product specification
N-channel dual gate MOS-FETs
PACKAGE OUTLINES Plastic surface mounted package; 4 leads
BF904; BF904R
SOT143B
D
B
E
A
X
y vMA HE
e bp wM B
4
3
Q
A
A1 c
1
b1 e1
2
Lp detail X
0
1 scale
2 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.9 A1 max 0.1 bp 0.48 0.38 b1 0.88 0.78 c 0.15 0.09 D 3.0 2.8 E 1.4 1.2 e 1.9 e1 1.7 HE 2.5 2.1 Lp 0.45 0.15 Q 0.55 0.45 v 0.2 w 0.1 y 0.1
OUTLINE VERSION SOT143B
REFERENCES IEC JEDEC EIAJ
EUROPEAN PROJECTION
ISSUE DATE 97-02-28
1999 May 17
11
Philips Semiconductors
Product specification
N-channel dual gate MOS-FETs
BF904; BF904R
Plastic surface mounted package; reverse pinning; 4 leads
SOT143R
D
B
E
A
X
y vMA HE
e bp wM B
3
4
Q
A
A1 c
2
b1 e1
1
Lp detail X
0
1 scale
2 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.9 A1 max 0.1 bp 0.48 0.38 b1 0.88 0.78 c 0.15 0.09 D 3.0 2.8 E 1.4 1.2 e 1.9 e1 1.7 HE 2.5 2.1 Lp 0.55 0.25 Q 0.45 0.25 v 0.2 w 0.1 y 0.1
OUTLINE VERSION SOT143R
REFERENCES IEC JEDEC EIAJ
EUROPEAN PROJECTION
ISSUE DATE 97-03-10
1999 May 17
12
Philips Semiconductors
Product specification
N-channel dual gate MOS-FETs
DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values
BF904; BF904R
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
1999 May 17
13
Philips Semiconductors
Product specification
N-channel dual gate MOS-FETs
NOTES
BF904; BF904R
1999 May 17
14
Philips Semiconductors
Product specification
N-channel dual gate MOS-FETs
NOTES
BF904; BF904R
1999 May 17
15
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For all other countries apply to: Philips Semiconductors, International Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 (c) Philips Electronics N.V. 1999
Internet: http://www.semiconductors.philips.com
SCA 64
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
125004/00/05/pp16
Date of release: 1999 May 17
Document order number:
9397 750 05898

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